Web2 Feb 2024 · TGF2024-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave … Web10 Feb 2024 · TGF2024-2-10. Qorvo. Discrete Power GaN on SiC HEMT-DIE. $144.33. 25 In stock. Qty. Add to Cart. Add to Quote. Add to Compare. Skip to the end of the images gallery. Skip to the beginning of the images gallery. Attributes . Attributes; Brand: Qorvo: Modelithics Model: Modelithics Model: Min Freq (MHz) 0: Max Freq (MHz) 14000: Output Power (dBm)
12 Watt Discrete Power GaN on SiC HEMT - BDTIC
Web20 Feb 2024 · TGF2024-2-20 Datasheets Wireless & RF ICs RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB By apogeeweb, TGF2024-2-20, TGF2024-2-20 … WebThe TriQuint TGF2024-02 is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. … oman statistics
TGF2024-2-02 Qorvo RF Power Transistor Qorvo
Web10 Feb 2024 · TGF2024-2-10 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operati ng conditions. The TGF2024-2-10 typically provides 46.7 dBm of saturated output power with power gain of 17.8 dB at 3GHz. Web1.25mm HEMT DC - 18 37.4 10.4 52 28 / 125 Die EAR99 TGF2024-01 2.5mm HEMT DC - 18 40.2 9.9 50 28 / 250 Die EAR99 TGF2024-02 5.0mm HEMT DC - 18 43 9.4 49 28 / 500 Die 3A001b.3b TGF2024-05 10mm HEMT DC - 18 45.8 8.9 47 28 / 1000 Die 3A001b.3b TGF2024-10 20mm HEMT DC - 18 48.6 8.4 46 28 / 2000 Die 3A001b.3b TGF2024-20 Web1 Feb 2024 · TGF2024-2-01 Qorvo RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB datasheet, inventory & pricing. is a pie chart an infographic